Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD

Author

Wang, G.W. ; Feng, Milton ; Kaliski, Robert ; Liaw, Y.P. ; Lau, C. ; Ito, C.

Author_Institution

Ford Microelectron. Inc., Colorado Springs, CO, USA

Volume

10

Issue

10

fYear

1989

Firstpage

449

Lastpage

451

Abstract

The authors present the fabrication and characterization of ion-implanted graded In/sub x/Ga/sub 1-x/As/GaAs MESFETs. The In/sub x/Ga/sub 1-x/As layers are grown on GaAs substrates by MOCVD (metal-organic chemical vapor deposition) with InAs concentration graded from 15% at the substrate to 0% at the surface. 0.5- mu m gate MESFETs are fabricated on these wafers using silicon ion implantation. In addition to improved Schottky contact, the graded In/sub x/Ga/sub 1-x/As MESFET achieves maximum extrinsic transconductance of 460 mS/mm and a current-gain cutoff frequency f/sub t/ of 61 GHz, which is the highest ever reported for a 0.5- mu m gate MESFET. In comparison, In/sub 0.1/Ga/sub 0.9/As MESFETs fabricated with the same processing technique show an f/sub t/ of 55 GHz.<>

Keywords

CVD coatings; III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; 0.5 micron; 61 GHz; GaAs; In/sub x/Ga/sub 1-x/As-GaAs; MESFETs; MOCVD; Schottky contact; current-gain cutoff frequency; ion-implanted graded devices; maximum extrinsic transconductance; Chemical vapor deposition; Fabrication; Gallium arsenide; Ion implantation; MESFETs; MOCVD; Millimeter wave technology; Schottky barriers; Silicon; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.43096

Filename

43096