Author :
Dupuis, N. ; Kazmierski, C. ; Decobert, Jean ; Alexandre, F. ; Jany, C. ; Garreau, A. ; Landreau, Jean ; Rasras, Mahmoud S. ; Cappuzzo, Mark ; Gomez, L.T. ; Chen, Y.F. ; Earnshaw, M.P. ; Lee, Jeyull ; Leven, Andreas ; Kang, I. ; Chandrasekhar, S. ; Buhl,
Abstract :
A new compact photonic-integrated modulator utilising a four-element reflective electro-absorption modulator-semiconductor optical amplifier (EAM-SOA) array and silica interferometric guide arrangement is presented. The EAM-SOA active layer consists of AlGaInAs quantum wells designed in selective area growth technology, which enables an insertion gain, and the mature silica platform provides reduced optical losses. As a result, error-free 50 Gbit/s RZ-QPSK signal generation is shown.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; quadrature phase shift keying; semiconductor optical amplifiers; semiconductor quantum wells; silicon compounds; AlGaInAs; RZ-QPSK signal generation; electro absorption modulator; four element reflective; high index contrast; hybrid optical vector modulator; photonic integrated modulator; quantum wells; reflective EAM; selective area growth technology; semiconductor optical amplifier; silica circuit;
