Title :
Numerical simulation of the gas immersion laser doping (GILD) process in silicon
Author :
Landi, Ettore ; Carey, Paul G. ; Sigmon, Thomas W.
Author_Institution :
Electron. Lab., Stanford Univ., CA, USA
fDate :
2/1/1988 12:00:00 AM
Abstract :
A simulation program that models the gas immersion laser doping (GILD) process is described. This program, which is called LASERMELT, first solves for the silicon melt depth and melt time versus laser energy fluence, and then the impurity dopant profiles using a dopant incorporation and impurity diffusion model. Experimental and simulated dopant profiles and sheet resistance values are given as functions of the laser energy fluence and number of pulses. The determination of liquid phase impurity diffusion coefficients in molten silicon is also described
Keywords :
doping profiles; electronic engineering computing; elemental semiconductors; laser beam applications; semiconductor doping; silicon; GILD process; LASERMELT; gas immersion laser doping; impurity dopant profiles; laser energy fluence; liquid phase impurity diffusion coefficients; melt depth; melt time; numerical simulation; semiconductor; sheet resistance; simulation program; Doping; Gas lasers; Implants; Impurities; Laser modes; Numerical simulation; Optical pulses; Rapid thermal annealing; Semiconductor process modeling; Silicon; Surface emitting lasers;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
