Title :
A high-current-gain low-temperature pseudo-HBT utilizing a sidewall base-contact structure (SICOS)
Author :
Yano, Kazuo ; Nakazato, Kazuo ; Amoto, Masafumi Miy ; Aoki, Masaaki ; Shimohigashi, Katsuhiro
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A silicon pseudo-heterojunction bipolar transistor (HBT) with a current gain of over 100 at 77 K has been successfully fabricated using the upward operation of a self-aligned sidewall base-contact structure (SICOS). The measured characteristics agree well with the theoretical prediction, showing a negative exponential temperature dependence of current gain and a 2500-times larger collector current than in the conventional transistor at 77 K. This makes homojunction bipolar transistor operation at low temperatures feasible and has the potential to overcome the bipolar/BiCMOS limitations.<>
Keywords :
elemental semiconductors; heterojunction bipolar transistors; silicon; 77 K; SICOS; bipolar/BiCMOS limitations; collector current; current gain; negative exponential temperature dependence; pseudo-HBT; sidewall base-contact structure; BiCMOS integrated circuits; Bipolar transistors; Current measurement; Gain measurement; Heterojunction bipolar transistors; Silicon; Temperature dependence;
Journal_Title :
Electron Device Letters, IEEE
