Title :
DC characteristics of AZO/GaN heterojunction bipolar transistors
Author :
Pan, Ching-Tsai ; Hou, R.-J. ; Hsin, Yue-Ming ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Nat. Central Univ., Taoyuan
Abstract :
A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120times120 mum2 exhibits a current gain of 5.8 at V BE=3.0=V. The anomalous high current gain is observed at low current level due to the leakage current. The common-emitter output characteristics demonstrate DC current gain of 1.2. In addition, improved device characteristics are observed after the P2S5/(NH4)2S treatment.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; leakage currents; wide band gap semiconductors; DC characteristics; GaN-ZnO:Al; current gain; gain 5.8 dB; heterojunction bipolar transistors; leakage current; voltage 3.0 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20093076
