Title :
GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles
Author :
Chiu, S.Y. ; Huang, H.W. ; Liang, K.C. ; Huang, T.H. ; Liu, K.P. ; Tsai, J.H. ; Lour, W.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung
Abstract :
A high-performance GaN hydrogen sensor fabricated by a Pd-SiO2 mixture to form a rough sensing surface with pores and nanoparticles is investigated. Hydrogen atoms trapped on the GaN surface and within the mixture form two-dimensional and three-dimensional dipoles, respectively, depending on biased voltages. Thus three sensing regions are found in current-voltage characteristics. The sensing response and barrier-height variation are over 107 and 410 mV, which are the highest values ever reported. The response time is as short as 40 s, indicating the proposed hydrogen sensor is very promising for hydrogen detection.
Keywords :
III-V semiconductors; gallium compounds; gas sensors; nanoparticles; nanosensors; wide band gap semiconductors; GaN; barrier-height variation; hydrogen atoms; hydrogen detection; hydrogen sensor; mixture forming sensing nanoparticles; rough sensing surface; voltage 410 mV;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20092158
