Title :
A boundary element method for modeling viscoelastic flow in thermal oxidation
Author :
Tung, Thye-Lai ; Connor, Jerome ; Antoniadis, Dimitry A.
Author_Institution :
MIT, Cambridge, MA, USA
fDate :
2/1/1988 12:00:00 AM
Abstract :
At temperatures encountered in thermal oxidation, silicon dioxide flows viscoelastically, A reduced-dimension, generalized boundary element method for modeling such a problem has been developed. A modified Kelvin´s solution is used as the kernel; constant-velocity loading is chosen to operate with a wide range of stress relaxation times. Simulation results are reported for simple cases of focal oxidation
Keywords :
boundary-elements methods; elemental semiconductors; oxidation; silicon; viscoelasticity; Kelvin´s solution; Si; Si-SiO2; boundary element method; constant-velocity loading; focal oxidation; modeling; semiconductor; simulation; stress relaxation times; thermal oxidation; viscoelastic flow; Boundary element methods; Elasticity; History; Kelvin; Kernel; Oxidation; Shape; Silicon compounds; Stress; Temperature; Thermal stresses; Viscosity;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
