Title :
GaAs HEMT low-noise cryogenic amplifiers from C-band to X-band with 0.7-K/GHz noise temperature
Author :
Risacher, Christophe ; Belitsky, Victor
Author_Institution :
Dept. of Radio & Space Sci., Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
3/1/2003 12:00:00 AM
Abstract :
Cryogenic low-noise two-stage amplifiers were developed for frequency bands of 3.4-4.6 GHz, 4-8 GHz, and 8-9 GHz using commercial GaAs high electron mobility transistor. The performances are in very good agreement with simulations, and at a cryogenic temperature of 12 K, input noise temperatures get as low as 0.6 K/GHz (2.8 K for the 3.4-4.6 GHz LNA and 5 K for the 4-8 GHz and 8-9 GHz LNAs). Gain ranges from 25 to 28 dB. Ultralow noise temperature, low-power consumption, high reliability, and reproducibility make these devices adequate for series production and receiver arrays in, e.g., telescopes.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit stability; cryogenic electronics; field effect MMIC; gallium arsenide; integrated circuit reliability; low-power electronics; 12 K; 2.8 K; 25 to 28 dB; 3.4 to 4.6 GHz; 4 to 8 GHz; 5 K; 8 to 9 GHz; C-band; GaAs; HEMT ICs; X-band; input noise temperatures; low-noise cryogenic amplifiers; low-power consumption; receiver arrays; reliability; reproducibility; series production; Cryogenics; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; MODFETs; Production; Reproducibility of results; Telescopes; Temperature;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.810116
