A voltage compensated series-gate bipolar circuit operating at sub-2 V

Author

Sato, Hisayasu ; Ueda, Kimio ; Sasaki, Nagisa ; Ikeda, Tatsuhiko ; Mashiko, Koichiro

Author_Institution

Syst. LSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

29

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

1200

Lastpage

1205

Abstract

A low-voltage series-gate (LSG) bipolar circuit is proposed. A lower-input transistor of the series-gate circuit acts as a current source transistor. The lower-input is driven by a VEE-traced buffer (VTB). The DC characteristics of the VTB output trace the change in a power supply voltage VEE. The switching current of the series-gate circuit is stable while VEE changes. The design of the VTB also takes the temperature variation into consideration. A 4-b counter using this circuit technology is fabricated with 0.8-μm double polysilicon self-align process. The maximum operating frequency of 640 MHz is obtained at -2.0 V and 25°C. The power dissipation of the 4-b counter is 3.3 mW. The circuit operates at over 500 MHz with the supply voltage of -1.6 V. The variation of VEE or temperature has a small effect on the circuit operation

Keywords

bipolar integrated circuits; buffer circuits; compensation; counting circuits; flip-flops; integrated logic circuits; -1.6 V; -2 V; 0.8 micron; 25 C; 3.3 mW; 4 bit; 4-b counter implementation; 500 to 640 MHz; DC characteristics; Si; double polysilicon self-align process; low-voltage operation; series-gate bipolar circuit; switching current; temperature variation; voltage compensated circuit; Counting circuits; Frequency; Microprocessors; Power dissipation; Power supplies; Silicon; Switching circuits; Temperature; Threshold voltage; Virtual colonoscopy;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.315203

Filename

315203