DocumentCode
1162164
Title
A figure of merit for the high-frequency noise behavior of bipolar transistors
Author
de Vreede, L.C.N. ; de Graaff, H.C. ; Hurkx, G.A.M. ; Tauritz, J.L. ; Baets, R.G.F.
Author_Institution
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Volume
29
Issue
10
fYear
1994
fDate
10/1/1994 12:00:00 AM
Firstpage
1220
Lastpage
1226
Abstract
In this paper a new figure of merit for high frequency noise behavior for use in the evaluation and development of bipolar silicon process technology is introduced. Basic low noise design rules for optimum transistor biasing and emitter scaling are proposed
Keywords
bipolar transistors; elemental semiconductors; equivalent circuits; semiconductor device models; semiconductor device noise; silicon; HF noise; Si; bipolar Si process technology; bipolar transistors; figure of merit; high-frequency noise behavior; low noise design rules; optimum emitter scaling; optimum transistor biasing; Bipolar transistors; Circuit noise; Frequency; Geometry; Integrated circuit noise; Laboratories; Magneto electrical resistivity imaging technique; Noise figure; Signal to noise ratio; Silicon;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.315206
Filename
315206
Link To Document