Title :
A figure of merit for the high-frequency noise behavior of bipolar transistors
Author :
de Vreede, L.C.N. ; de Graaff, H.C. ; Hurkx, G.A.M. ; Tauritz, J.L. ; Baets, R.G.F.
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
fDate :
10/1/1994 12:00:00 AM
Abstract :
In this paper a new figure of merit for high frequency noise behavior for use in the evaluation and development of bipolar silicon process technology is introduced. Basic low noise design rules for optimum transistor biasing and emitter scaling are proposed
Keywords :
bipolar transistors; elemental semiconductors; equivalent circuits; semiconductor device models; semiconductor device noise; silicon; HF noise; Si; bipolar Si process technology; bipolar transistors; figure of merit; high-frequency noise behavior; low noise design rules; optimum emitter scaling; optimum transistor biasing; Bipolar transistors; Circuit noise; Frequency; Geometry; Integrated circuit noise; Laboratories; Magneto electrical resistivity imaging technique; Noise figure; Signal to noise ratio; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
