Title :
A 4 Gb/s 2-level to 2 Gsymbol/s 4-level converter GaAs IC for semiconductor optical amplifier QPSK modulators
Author :
Riishoj, J. ; Nielsen, T.N. ; Gliese, U.
Author_Institution :
Electromagn. Inst., Tech. Univ. Denmark, Lyngby, Denmark
fDate :
10/1/1994 12:00:00 AM
Abstract :
The design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier (SOA) modulators is presented. The designed IC exhibits eye diagrams with eye openings of better than 0.30 V and a spacing between adjacent output signal levels of 0.33 V for output symbol rates of up to 2 Gsymbol/s corresponding to input bit rates of up to 4 Gb/s. A novel differential super buffer output driver is applied, for which output reflection coefficients |S22| of less than -12 dB for frequencies up to 10 GHz are obtained. A 1 Gb/s optical QPSK microwave link transmission experiment using a packaged sample of the designed IC and a two-electrode semiconductor optical amplifier phase modulator has been conducted
Keywords :
III-V semiconductors; code convertors; field effect integrated circuits; gallium arsenide; microwave links; optical fibres; optical links; optical modulation; phase shift keying; semiconductor lasers; 1 Gbit/s; GaAs; GaAs converter IC; QPSK modulators; adjacent output signal levels; differential super buffer output driver; eye diagrams; eye openings; optical QPSK microwave link transmission; output reflection coefficients; output symbol rates; phase modulator; semiconductor optical amplifier; Bit rate; Gallium arsenide; Impedance; Optical buffering; Optical design; Optical modulation; Optical reflection; Photonic integrated circuits; Semiconductor optical amplifiers; Signal design;
Journal_Title :
Solid-State Circuits, IEEE Journal of
