• DocumentCode
    1162226
  • Title

    GaAs HBT 0.75-5 GHz multifunctional microwave-analog variable gain amplifier

  • Author

    Kobayashi, Kevin W. ; Ip, Kwan T. ; Oki, Aaron K. ; Umemoto, Donald K. ; Claxton, Shimen ; Pope, Matt ; Wiltz, Jerry

  • Author_Institution
    Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
  • Volume
    29
  • Issue
    10
  • fYear
    1994
  • fDate
    10/1/1994 12:00:00 AM
  • Firstpage
    1257
  • Lastpage
    1261
  • Abstract
    We report on a GaAs HBT 3-stage variable gain amplifier operating over a 0.75-5 GHz frequency band. The amplifier is broken up into a single-ended HBT LNA pre-amplifier, an analog current steering differential cascode cell for variable gain control, and a differential amplifier output stage. The broadband pre-amplifier is required to reduce the inherently noisy differential cascode stage, and an output differential amplifier is used to provide output drive capability and differential to single-ended conversion. The VGA has a maximum gain of 23.8 dB gain, an IP3>18 dBm, and a noise figure of 6.5 dB. The variable gain control range is >35 dB. This chip demonstrates the versatility of HBT IC technology which can integrate digital, analog, and microwave circuit functions to achieve high performance in a single monolithic chip
  • Keywords
    III-V semiconductors; MMIC; bipolar integrated circuits; differential amplifiers; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; microwave amplifiers; 0.75 to 5 GHz; 23.8 dB; 6.5 dB; GaAs; HBT; HBT IC technology; broadband pre-amplifier; current steering differential cascode cell; differential amplifier output stage; multifunctional microwave-analog variable gain amplifier; output drive capability; single-ended HBT LNA pre-amplifier; variable gain control; Analog integrated circuits; Broadband amplifiers; Differential amplifiers; Frequency; Gain control; Gallium arsenide; Heterojunction bipolar transistors; Microwave integrated circuits; Noise figure; Noise reduction;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.315212
  • Filename
    315212