Title :
230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications
Author :
Chevalier, Pascal ; Fellous, Cyril ; Rubaldo, Laurent ; Pourchon, Franck ; Pruvost, Sébastien ; Beerkens, Rudy ; Saguin, Fabienne ; Zerounian, Nicolas ; Barbalat, Benoît ; Lepilliet, Sylvie ; Dutartre, Didier ; Céli, Didier ; Telliez, Isabelle ; Gloria, D
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology. The technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented and discussed with respect to BiCMOS performance objectives and integration constraints. DC and high-frequency device performances at room and cryogenic temperatures are given. HICUM model agreement with the measurements is also discussed. Finally, building blocks with state-of-the-art performances for a CMOS compatible technology are presented: A ring oscillator with a minimum stage delay of 4.4 ps and a 40-GHz low-noise amplifier with a noise figure of 3.9 dB and an associated gain of 9.2 dB were fabricated.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit measurement; millimetre wave circuits; optical communication; self-assembly; 230 GHz; 3.9 dB; 9.2 dB; 90 nm; BiCMOS; HICUM model; SiGeC; millimeter wave applications; optical communication; selective epitaxial growth; self aligned HBT; BiCMOS integrated circuits; CMOS technology; Cryogenics; Epitaxial growth; Heterojunction bipolar transistors; Millimeter wave technology; Millimeter wave transistors; Semiconductor device modeling; Stimulated emission; Temperature; BiCMOS integrated circuits; heterojunction bipolar transistors; millimeter-wave circuits; optical communication;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2005.852846
