DocumentCode :
1162880
Title :
Threshold voltage for GaAs MESFET with a recoil-implanted channel profile
Author :
Kwok, H.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
Volume :
8
Issue :
7
fYear :
1989
fDate :
7/1/1989 12:00:00 AM
Firstpage :
817
Lastpage :
820
Abstract :
Calculations of threshold voltages and their variations with respect to fluctuations in the substrate dopant density and the channel depth were performed for a recoil-implanted profile of a GaAs MESFET. It was observed that for these very shallow channels, the range of threshold voltages obtained was considerably smaller for different nitride thicknesses and there was a noticeable reduction in the sensitivity of the threshold voltage to fluctuations in the substrate parameters. The implant depth was the crucial parameter in the determination of the threshold voltage and its sensitivity, although in recoil implantation the surface dopant density appeared to be the dominant parameter
Keywords :
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; GaAs; MESFET; channel depth; nitride thicknesses; recoil-implanted channel profile; substrate dopant density; surface dopant density; threshold voltages; very shallow channels; Analytical models; Councils; Equations; FETs; Fluctuations; Gallium arsenide; Implants; MESFETs; Semiconductor process modeling; Threshold voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.31540
Filename :
31540
Link To Document :
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