Threshold voltage for GaAs MESFET with a recoil-implanted channel profile

Author

Kwok, H.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada

Volume

8

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

817

Lastpage

820

Abstract

Calculations of threshold voltages and their variations with respect to fluctuations in the substrate dopant density and the channel depth were performed for a recoil-implanted profile of a GaAs MESFET. It was observed that for these very shallow channels, the range of threshold voltages obtained was considerably smaller for different nitride thicknesses and there was a noticeable reduction in the sensitivity of the threshold voltage to fluctuations in the substrate parameters. The implant depth was the crucial parameter in the determination of the threshold voltage and its sensitivity, although in recoil implantation the surface dopant density appeared to be the dominant parameter

Keywords

III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; GaAs; MESFET; channel depth; nitride thicknesses; recoil-implanted channel profile; substrate dopant density; surface dopant density; threshold voltages; very shallow channels; Analytical models; Councils; Equations; FETs; Fluctuations; Gallium arsenide; Implants; MESFETs; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.31540

Filename

31540