• DocumentCode
    1163035
  • Title

    Nonstationary carrier dynamics in quarter-micron Si MOSFETs

  • Author

    Tomizawa, Masaaki ; Yokoyama, Kiyoyuki ; Yoshi, Akira

  • Author_Institution
    LSI Labs., NTT, Kanagawa, Japan
  • Volume
    7
  • Issue
    2
  • fYear
    1988
  • fDate
    2/1/1988 12:00:00 AM
  • Firstpage
    254
  • Lastpage
    258
  • Abstract
    An application of Monte Carlo particle and relaxation time approximation modeling to quarter-micron Si MOSFETs is presented. Through a comparison between these two nonstatic models and a conventional model, nonstationary carrier transport is shown to dominate in 0.4 μm or less channel devices, with peak velocities exceeding 1.0×107 cm/s. It is shown that the relaxation time approximation model tends to overestimate nonstationary carrier dynamics, especially the energy distribution
  • Keywords
    Monte Carlo methods; carrier mobility; insulated gate field effect transistors; semiconductor device models; 0.25 micron; MOSFETs; Monte Carlo; Si; energy distribution; nonstatic models; nonstationary carrier transport; peak velocities; relaxation time approximation modeling; Acoustic scattering; Electrons; Hot carriers; Large scale integration; MOSFETs; Monte Carlo methods; Optical scattering; Optimization methods; Particle scattering; Phonons;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.3156
  • Filename
    3156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1163035