Title :
GaAs as a semiconductor
Author_Institution :
US Naval Ship Weapons Syst. Eng. Station, Pt. Hueneme, CA, USA
Abstract :
The characteristics of semiconductors that make them useful for devices, and the basic principles of the devices are explained. The effect of doping is given particular attention. The properties of GaAs that make it a desirable device material are examined. These are its high electron mobilities, which are essential to high-speed device applications, and its radiation resistance, which makes it a prime material for space and military applications.<>
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; semiconductor devices; semiconductor doping; GaAs; III-V semiconductors; high electron mobilities; high-speed device applications; military applications; radiation resistance; space applications; Bonding; Charge carrier processes; Chemicals; Conducting materials; Electrons; Gallium arsenide; Lattices; Semiconductivity; Semiconductor materials; Temperature;
Journal_Title :
Potentials, IEEE
