A circuit simulation model for bipolar-induced breakdown in MOSFET

Author

Pinto-Guedes, Mario ; Chan, Philip C.

Author_Institution

Intel Corp., Santa Clara, CA, USA

Volume

7

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

289

Lastpage

294

Abstract

The successful modeling of short-channel transistor breakdown characteristics with effective channel length down to 0.6 μm is reported. The sudden increase in the MOS drain current due to threshold voltage reduction caused by the forward biasing of the source-substrate junction is also modeled with considerable accuracy. This is the first successful application of a short-channel breakdown model in a circuit simulator. Model parameter extraction and installation of the model in the circuit simulator is also discussed

Keywords

electronic engineering computing; equivalent circuits; impact ionisation; insulated gate field effect transistors; semiconductor device models; 0.6 micron; MOS drain current; MOSFET; bipolar-induced breakdown; channel length; circuit simulation model; equivalent circuit; forward biasing; impact ionisation; model parameter extraction; short-channel transistor breakdown characteristics; source-substrate junction; threshold voltage reduction; Analytical models; Bipolar integrated circuits; Charge carrier processes; Circuit simulation; Electric breakdown; Electrons; FETs; Impact ionization; MOSFET circuits; Parameter extraction; Threshold voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.3159

Filename

3159