DocumentCode
1163601
Title
Generalized linear-parabolic law: a mathematical model for thermal oxidation of silicon
Author
Chiou, Yun-Leei ; Sow, C.H. ; Ports, K.
Author_Institution
Dept. of Electr. Eng., South Florida Univ., Tampa, FL, USA
Volume
10
Issue
1
fYear
1989
Firstpage
1
Lastpage
3
Abstract
Silicon dioxide growth curves under a variety of oxidation conditions are analyzed. The results indicated that the growth curve is not the linear-parabolic equation as predicted by the Deal-Grove model. Instead, a generalized form of the linear-parabolic equation in which the coefficients are allowed to accommodate the change in the sign and thickness dependency is desirable to describe the silicon oxidation process. It is also shown that the thickness dependence of the rate constant with appropriate approximations can be expressed explicitly in a functional form.<>
Keywords
elemental semiconductors; oxidation; reaction rate constants; silicon; Deal-Grove model; Si; Si-SiO/sub 2/; generalised linear parabolic law; mathematical model; oxide growth curves; rate constant; thermal oxidation; thickness dependency; Electronic switching systems; Equations; Integrated circuit reliability; Kinetic theory; Mathematical model; Oxidation; Predictive models; Silicon; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31662
Filename
31662
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