Title :
Fabrication of p-i-n photodiodes on LPE-grown substrates
Author :
Sukegawa, Tokuzo ; Kimura, Masakazu ; Tanaka, Akira
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
Epitaxial growth of a thick heavily doped silicon layer on a highly resistive silicon wafer by the yo-yo solute feeding method and its application to p-i-n photodiodes are discussed. An abrupt transition of the impurity profile is obtained between the n/sup +/ layer (1.95*10/sup 19/ cm/sup -3/, 450 mu m) and the n/sup -/ layer (7.0*10/sup 11/ cm/sup -3/, 80 mu m). It is possible to use the thick intrinsic layers as the active region of power devices.<>
Keywords :
doping profiles; liquid phase epitaxial growth; p-i-n diodes; photodiodes; semiconductor growth; LPE-grown substrates; Si:P-Si; active region; epitaxial growth; impurity profile; n/sup +/ layer; n/sup -/ layer; p-i-n photodiodes; yo-yo solute feeding method; Atomic layer deposition; Atomic measurements; Epitaxial growth; Epitaxial layers; Fabrication; Impurities; PIN photodiodes; Silicon; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
