DocumentCode :
1163662
Title :
CMOS readout circuit allowing microbolometer arrays to operate without temperature stabilisation
Author :
Kang, S.G. ; Lee, Y.S. ; Lee, H.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea
Volume :
40
Issue :
23
fYear :
2004
Firstpage :
1459
Lastpage :
1460
Abstract :
A new CMOS readout circuit that controls the non-uniformity of microbolometer arrays as a function of operating temperature change is described. This circuit provides a nonlinear bias current for operating temperature using a MOS transistor that is operated in the subthreshold region. This approach allows microbolometer arrays to operate without temperature stabilisation up to an operating temperature change of approximately 40K.
Keywords :
CMOS integrated circuits; MOSFET; bolometers; infrared detectors; readout electronics; 40 K; CMOS readout circuit; MOS transistor; microbolometer arrays; nonlinear bias current; nonuniformity calibration method; operating temperature change; temperature stabilisation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20046830
Filename :
1358931
Link To Document :
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