Title :
Very long current transients in reverse-biased almost ideal n/sup +/-p junctions
Author :
Basso, G. ; Pellegrini, B. ; Polignano, M.L. ; Saletti, R. ; Terreni, P.
Author_Institution :
Istituto di Electron. e Telecommun., Pisa Univ., Italy
Abstract :
The current transients due to a change in reverse-bias voltage in almost ideal n/sup +/-p junctions obtained by proper gettering processes are discussed. Very long relaxation phenomena are observed. The transient current is fitted by a t/sup -v/ law with v approximately=0.7 and by an exponential with a relaxation time of 45 min. The transient current amplitude is virtually proportional to the volume of the depletion region swept by changing the reverse bias.<>
Keywords :
getters; p-n homojunctions; transients; almost ideal n/sup +/-p junctions; depletion region; gettering; long current transients; relaxation phenomena; relaxation time; reverse-bias voltage; transient current amplitude; Capacitance; Containers; Copper; Diodes; Gettering; Glass; Ice; Oxidation; Silicon compounds; Voltage;
Journal_Title :
Electron Device Letters, IEEE
