Title :
Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design
Author :
Ng, G.I. ; Pavlidis, Dimitrios ; Tutt, M. ; Oh, J.E. ; Bhattacharya, Pallab K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
The DC and microwave properties of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 052/Al/sub 0.48/As HEMTs (high electron-mobility transistors) with double-heterojunction design are presented. The high sheet carrier density and good carrier confinement give rise to excellent device performance with very low output conductance. For 1*150- mu m/sup 2/ long-gate HEMTs, the measured cutoff frequency f/sub T/ and maximum frequency of oscillation f/sub max/ are as high as 37 and 66 GHz, respectively.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; p-n heterojunctions; 37 GHz; 66 GHz; DC properties; HEMT characteristics; In/sub 0.65/Ga/sub 0.35/As-In/sub 0.52/Al/sub 0.48/As; carrier confinement; cutoff frequency; device performance; double-heterojunction design; microwave properties; oscillation; output conductance; sheet carrier density; Carrier confinement; Charge carrier density; Cutoff frequency; Gold; HEMTs; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Microwave devices;
Journal_Title :
Electron Device Letters, IEEE
