Title :
p-n-p heterojunction bipolar transistors with buried subcollector layers
Author :
Bayraktaroglu, Burhan ; Lambert, Steve A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
The buried-layer technology was applied to the fabrication of high-speed p-n-p AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The subcollector layer was selectively implanted prior to the epitaxial growth of the rest of the device structure thereby eliminating the need for deep mesa isolation. Devices with 2*10- mu m/sup 2/ emitter fingers and 100-nm base thickness had common-emitter current gains of 15 and cutoff frequencies of 17 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; 17 GHz; base thickness; buried subcollector layers; buried-layer technology; common-emitter current gains; cutoff frequencies; emitter fingers; epitaxial growth; heterojunction bipolar transistors; subcollector layer; Cutoff frequency; Doping; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Ion implantation; Microwave devices; Silicon;
Journal_Title :
Electron Device Letters, IEEE
