Author :
Gollub, D. ; Kamp, M. ; Forchel, A. ; Seufert, J. ; Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S.
Abstract :
GaAs-based singlemode emission at 1.5 /spl mu/m has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor lasers; wide band gap semiconductors; 1.5 micron; 1496 nm; 95 mA; GaAs based singlemode emission; GaInNAsSb; GalnNAsSb distributed feedback lasers; continuous wave operation; laser diodes; sidemode suppression ratio; strain-compensating barriers;
