Title :
Reliability analysis of AlGaInAs lasers at 1.3 /spl mu/m
Author :
Vilokkinen, V. ; Savolainen, P. ; Sipila, P.
Author_Institution :
Modulight Inc., Tampere, Finland
Abstract :
Long-term reliability of 2.5 and 10 Gbit/s 1.3 /spl mu/m AlGaInAs lasers has been demonstrated. Analysis of accelerated life test predicts median life of /spl ges/1.57/spl times/10/sup 6/ h (180 years) at 85/spl deg/C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor device reliability; semiconductor lasers; 1.3 micron; 10 Gbit/s; 2.5 Gbit/s; 85 degC; AlGaInAs; AlGaInAs lasers; reliability analysis; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046314
