Title :
High-performance thin-film silicon-on-insulator CMOS transistors in porous anodized silicon
Author :
Thomas, N.J. ; Davis, J.R. ; Keen, J.M. ; Castledine, J.G. ; Brumhead, D. ; Goulding, M. ; Alderman, J. ; Farr, J.P.G. ; Earwaker, L.G. ; L´Ecuyer, J. ; Stirland, I.M. ; Cole, J.M.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
3/1/1989 12:00:00 AM
Abstract :
Ultrathin-film silicon-on-insulator (SOI) CMOS transistors, produced in silicon islands 100 nm thick, formed by oxidation of porous anodized silicon, are described. Both n-channel and p-channel mobilities are similar to equivalent bulk values. Subthreshold slopes are less than 80 mV/decade and junction leakages are approximately 0.1 pA/ mu m. No kink is seen in the output characteristics of the n-channel transistors as the silicon film is fully depleted. A ring-oscillator gate delay of 161 ps has been achieved, at a power dissipation of 270 mu W/stage, for 1.5- mu m gate length.<>
Keywords :
CMOS integrated circuits; elemental semiconductors; insulated gate field effect transistors; oxidation; silicon; 1.5 micron; 100 nm; 161 ps; 270 muW; CMOS transistors; SOI; Si islands; junction leakages; n-channel mobilities; output characteristics; oxidation; p-channel mobilities; porous anodized material; power dissipation; ring-oscillator gate; Doping; Epitaxial layers; Implants; Oxidation; Production; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
