Deep-level dominated current-voltage characteristics of buried implanted oxide silicon-on-insulator

Author

Das, K. ; Palmour, J.W. ; Posthill, J.B. ; Humphreys, T.P. ; O´Sullivan-French, J. ; Byrd, N.Y. ; Lu, D. ; Wortman, J.J. ; Parikh, N.R.

Author_Institution

Dept. of Mater. Sci., North Carolina State Univ., Raleigh, NC, USA

Volume

10

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

135

Lastpage

137

Abstract

Current-voltage characteristics of Au contacts formed on buried implanted oxide silicon-on-insulator (SOI) structures are discussed, which indicate that the dominant transport mechanism is space-charge-limited current (SCLC) conduction in the presence of deep-level states. The deep-level parameters, determined using a simple analysis, appear to be sensitive to anneal conditions used and subsequent processing. Silicon implanted with 1.7*10/sup 18/ cm/sup -2/ oxygen ions at 150 keV following a 1200 degrees C anneal for 3 h shows deep level 0.37 eV below the conduction band edge with a concentration of unoccupied traps of approximately 2*10/sup 15/ cm/sup -3/. In contrast, arsenic ion implantation, in the 1200 degrees C annealed material with a dose of 1.5*10/sup 12/ cm/sup -2/ at 60 keV and activated by rapid thermal annealing (RTA), introduces a deep level 0.25 eV below the conduction band edge with an unoccupied trap concentration of approximately 6*10/sup 17/ cm/sup -2/.<>

Keywords

annealing; arsenic; deep levels; elemental semiconductors; gold; oxygen; silicon; space-charge-limited conduction; 1200 degC; 150 keV; 60 keV; Au-Si:As; Au-Si:O; anneal conditions; buried implanted oxide silicon-on-insulator; conduction band edge; current-voltage characteristics; deep-level states; rapid thermal annealing; space-charge-limited current; transport mechanism; unoccupied trap concentration; Conducting materials; Current-voltage characteristics; Dielectric materials; Gold; Ion implantation; Materials science and technology; Rapid thermal annealing; Silicon on insulator technology; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31693

Filename

31693