Title :
Self-aligned In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with graded interface on semi-insulating InP grown by molecular beam epitaxy
Author :
Won, T. ; Morkoç, Hadis
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
A self aligned In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double heterojunction bipolar transistor (HBT) with a graded heterointerface has been grown by molecular-beam epitaxy (MBE) and tested. The DC characteristics of HBT structures with a compositionally graded junction using a linear graded In/sub 0.53/Ga/sub 0.47-x/Al/sub x/As between two ternary layers were investigated. Typical quaternary graded devices with an emitter dimension of 50*50 mu m/sup 2/ exhibited a current gain as high as 1260, as compared to 800 for abrupt devices, at a collector current density of 2.8*10/sup 3/ A/cm/sup 2/.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; DC characteristics; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As; InP; collector current density; compositionally graded junction; current gain; double heterojunction; emitter dimension; graded interface; heterojunction bipolar transistors; molecular beam epitaxy; Bipolar transistors; Doping; Electron emission; Frequency; Gold; Heterojunction bipolar transistors; Indium phosphide; Metallization; Molecular beam epitaxial growth; Substrates;
Journal_Title :
Electron Device Letters, IEEE
