Title :
280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations
Author :
Wakejima, A. ; Matsunaga, K. ; Okamoto, Y. ; Ando, Y. ; Nakayama, T. ; Kasahara, K. ; Miyamoto, H.
Author_Institution :
R&D Assoc. for Future Electron Devices, NEC Corp., Otsu, Japan
Abstract :
A single-ended amplifier using a single-die GaN-FET was successfully developed for W-CDMA cellular base-station systems. The developed amplifier delivers a peak saturated output power of 280 W with a linear gain of 12.6 dB at a drain voltage of 48 V under 2.15 GHz 3GPP W-CDMA signal input. It is believed that the 280 W output power is the record output power in single-ended amplifiers at 2 GHz band. A high drain efficiency of 29% is also obtained at 8 dB power back off from the saturated output power.
Keywords :
3G mobile communication; III-V semiconductors; UHF power amplifiers; cellular radio; code division multiple access; field effect transistor circuits; gallium compounds; wide band gap semiconductors; 12.6 dB; 2 GHz; 280 W; 3G mobile communication; 48 V; GaN; III-V semiconductors; UHF power amplifiers; W-CDMA cellular base station systems; cellular radio; code division multiple access; field effect transistor circuits; single-die GaN-FET; single-ended amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052513
