Interface characterization of silicon epitaxial lateral growth over existing SiO/sub 2/ for three-dimensional CMOS structures

Author

Friedrich, J.A. ; Neudeck, Gerold W.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

10

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

144

Lastpage

146

Abstract

The silicon-silicon dioxide interface created by the epitaxial lateral growth of monocrystalline silicon (ELO) over existing thermally oxidized silicon was investigated using a novel device structure. This structure is proposed as the basic building block of technology for the fabrication of locally restricted three-dimensional integrated CMOS circuits, as well as advanced bipolar devices. Results are reported from the investigation of the surface states of this silicon-on-insulator (SOI) interface. It is demonstrated that these interfaces can exhibit characteristics comparable to those interfaces created by the thermal oxidation of silicon. The SOI interface surface state densities, as grown, were measured to be about 2*10/sup 11/ cm/sup -2/ eV/sup -1/ at midgap energies. It is believed that H/sub 2/ from the epitaxial growth ambient is trapped at the interface and neutralizes surface states.<>

Keywords

CMOS integrated circuits; integrated circuit technology; semiconductor epitaxial layers; semiconductor-insulator boundaries; surface electron states; vapour phase epitaxial growth; ELO; H/sub 2/; SOI interface; Si-SiO/sub 2/ interface characterisation; advanced bipolar devices; epitaxial lateral growth; locally restricted 3D CMOS ICs; structures; surface states; three-dimensional; CMOS technology; Circuits; Epitaxial growth; Fabrication; Inverters; Isolation technology; Oxidation; Silicon on insulator technology; Substrates; Surface morphology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31698

Filename

31698