Title :
Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors
Author :
Kurtz, S.R. ; Dawson, L.R. ; Biefeld, R.M. ; Fritz, I.J. ; Zipperian, Thomas E.
Author_Institution :
Sandia Nat. Labs. Albuquerque, NM, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
Long-wavelength infrared photodiodes were fabricated using InAs/sub 1-x/Sb/sub x//InSb (x=0.82-0.85) strained-layer superlattices (SLSs). These structures can be grown using either molecular-beam epitaxy or metalorganic chemical vapor deposition. These photodiodes display broad spectral responses up to wavelengths greater than or approximately equal to 10 mu m, and detectivities of 1*10/sup 9/ cm-Hz/sup 1/2//W at 10 mu m.<>
Keywords :
III-V semiconductors; indium antimonide; indium compounds; infrared detectors; photodiodes; semiconductor superlattices; 5 to 10 micron; IR detectors; InAs/sub 1-x/Sb-InSb; broad spectral responses; detectivities; long wavelength IR photodiodes; metalorganic chemical vapor deposition; molecular-beam epitaxy; strained-layer superlattice; Doping; Electromagnetic wave absorption; Gallium arsenide; Infrared detectors; Laser sintering; Photodiodes; Photovoltaic systems; Solar power generation; Substrates; Superlattices;
Journal_Title :
Electron Device Letters, IEEE
