DocumentCode
1164067
Title
Quantum well intermixing and MOCVD regrowth for monolithic integration of 40 Gbit/s UTC type photodiodes with QW based components
Author
Raring, J.W. ; Skogen, E.J. ; Barton, J.S. ; Wang, C.S. ; DenBaars, S.P. ; Coldren, L.A.
Author_Institution
Mater. Dept., Univ. of California, Santa Barbara, CA, USA
Volume
41
Issue
18
fYear
2005
Firstpage
1033
Lastpage
1034
Abstract
A novel fabrication method for uni-travelling carrier (UTC) type photodiodes using quantum well (QW) intermixing and MOCVD regrowth is presented. This scheme will enable the monolithic integration of the photodiodes with high gain laser diodes, high efficiency electroabsorption modulators, and high saturation power semiconductor optical amplifiers. The photodiodes fabricated on intermixed quantum wells presented exhibit excellent photocurrent handling capabilities, minimal response roll-off over the 20 GHz of the testing capability, and open 40 Gbit/s eye diagrams.
Keywords
MOCVD; carrier mobility; photodiodes; quantum well devices; semiconductor quantum wells; 40 Gbit/s; MOCVD regrowth; QW based components; UTC type photodiodes; minimal response roll-off; monolithic integration; photocurrent handling capability; quantum well intermixing; uni-travelling carrier type photodiodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20051879
Filename
1507081
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