• DocumentCode
    1164087
  • Title

    Reduction of propagation loss in silica-on-silicon channel waveguides formed by electron beam irradiation

  • Author

    Syms, Richard R. A. ; Tate, T.J.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London
  • Volume
    30
  • Issue
    18
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1480
  • Lastpage
    1481
  • Abstract
    Low loss is demonstrated at infrared wavelengths in channel guides formed by electron beam irradiation of SiO2 layers on Si substrates. By comparing materials from different PECVD processes, it is shown that substrate losses may largely be eliminated by using a suitable SiO2 thickness, and that extrinsic absorption caused by hydrogen contamination may be reduced by annealing before irradiation. The effectiveness of annealing depends strongly on the original material composition
  • Keywords
    annealing; electron beam effects; optical losses; optical waveguides; optical workshop techniques; plasma CVD; silicon; silicon compounds; PECVD processes; Si; SiO2-Si; annealing; electron beam irradiation; extrinsic absorption; infrared wavelengths; propagation loss; silica-on-silicon channel waveguides; substrate losses;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941021
  • Filename
    317024
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1164087