Title :
Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processing
Author :
King, C.A. ; HOyt, Judy L. ; Noble, D.B. ; Gronet, Chris M. ; Gibbons, Jaes F. ; Scott, M.P. ; Kamins, Theodore I. ; Laderman, S.S.
Author_Institution :
Electron. Labs., Stanford Univ., CA, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
Si/sub 1-x/Ge/sub x//Si p-N heterojunctions prepared by a chemical vapor deposition technique, limited reaction processing (LRP) were characterized using DC electrical measurements, transmission electron microscopy (TEM), and X-ray topography. Heterojunctions with Si/sub 1-x/Ge/sub x/ layer thickness ranging from 52 to 295 nm and a constant Ge fraction of 23% were fabricated to study the effect of increasing the number of misfit dislocations on the device characteristics. Devices with the thinnest layers (>
Keywords :
Ge-Si alloys; X-ray diffraction examination of materials; dislocations; p-n heterojunctions; semiconductor growth; semiconductor materials; silicon; transmission electron microscope examination of materials; vapour phase epitaxial growth; DC electrical measurements; Si/sub 1-x/Ge/sub x/-Si; TEM; X-ray topography; chemical vapor deposition; dislocation spacings; forward characteristics; ideality factors; limited reaction processing; misfit dislocations; p-N heterojunctions; recombination currents; reverse leakage current densities; Chemical vapor deposition; Current measurement; Displays; Electric variables measurement; Heterojunctions; Leakage current; Material properties; Surfaces; Temperature; Transmission electron microscopy;
Journal_Title :
Electron Device Letters, IEEE
