Title :
Thermal oxidation of AlGaAs: modeling and process control
Author :
Ku, Pei-Cheng ; Chang-Hasnain, Connie J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
fDate :
4/1/2003 12:00:00 AM
Abstract :
A simple physical model is developed for the thermal oxidation process of AlGaAs using the continuity equation. The model is based on the principle of oxidant mass conservation. Theoretical calculations are compared with experimental data to a good agreement. The model is then applied to the study of VCSEL batch fabrication. Several control parameters are discussed including AlGaAs layer thickness, aluminum composition, initial mesa size, spacing between two adjacent devices, oxidation time, and oxidation temperature.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical control; optical fabrication; oxidation; process control; semiconductor process modelling; surface emitting lasers; AlGaAs; AlGaAs layer thickness; AlOx; VCSEL batch fabrication; aluminum composition; continuity equation; control parameters; initial mesa size; modeling; oxidant mass conservation; oxidation temperature; oxidation time; process control; simple physical model; spacing; thermal oxidation; Aluminum; Calibration; Equations; Laser modes; Optical device fabrication; Oxidation; Process control; Semiconductor process modeling; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.809340
