1.3 μm light-emission-and-detection (LEAD) diodes with semi-insulating buried heterostructure

Author

Tohmori, Y. ; Fukuda, Motohisa ; Matsumoto, Shinichi ; Kurosaki, T. ; Yamamoto, Manabu ; Itaya, Y. ; Sugie, Toshiharu ; Tsuchiya, Hideaki

Author_Institution

NTT Opto-Electron. Labs., Kanagawa

Volume

30

Issue

18

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

1518

Lastpage

1519

Abstract

The authors present 1.3 μm light-emission-and-detection (LEAD) diodes fabricated by semi-insulating MOVPE growth and C₂H₆ dry-etching processes. As a laser, this LEAD diode operates with low threshold and high power. Aging test results confirm ifs long-term stability of up to 4500 h. As a detector, a high sensitivity of 0.42 A/W and a polarisation insensitivity of less than 0.3 dB were achieved by using facet coating and a bulk active layer. The capacitance was effectively reduced to 0.6 pF by introducing a semi-insulating current-blocking structure

Keywords

laser transitions; optical communication equipment; photodetectors; photodiodes; semiconductor lasers; vapour phase epitaxial growth; 0.6 pF; 1.3 micron; C₂H₆ dry-etching processes; LEAD diode; MOVPE growth; bulk active layer; capacitance; facet coating; laser; light-emission/detection diodes; long-term stability; polarisation insensitivity; semi-insulating buried heterostructure; semi-insulating current-blocking structure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19941003

Filename

317050