مرکز منطقه ای اطلاع رساني علوم و فناوري - High-Voltage nLDMOS in Waffle-Layout Style With Body-Injected Technique for ESD Protection

DocumentCode :

1164337

Title :

High-Voltage nLDMOS in Waffle-Layout Style With Body-Injected Technique for ESD Protection

Author :

Chen, Wen-Yi ; Ker, Ming-Dou

Author_Institution :

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu

Volume :

Issue :

fYear :

2009

fDate :

4/1/2009 12:00:00 AM

Firstpage :

389

Lastpage :

391

Abstract :

Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-mum 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (I_t2) of nLDMOS has a more than 2x increase by the body-current injection.

Keywords :

CMOS integrated circuits; electric breakdown; electrostatic discharge; ESD; bipolar CMOS DMOS process; body-current injection; body-injected technique; electrostatic discharge; n-channel lateral DMOS; secondary breakdown current; waffle-layout style; Bipolar CMOS DMOS (BCD) process; body-current injection; electrostatic discharge (ESD); lateral DMOS (LDMOS);

fLanguage :

English

Journal_Title :

Electron Device Letters, IEEE

Publisher :

ieee

ISSN :

0741-3106

Type :

jour

DOI :

10.1109/LED.2009.2013368

Filename :

4785202

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1164337