Feasibility analysis of phonon lasers

Author

Chen, Jing ; Khurgin, Jacob B.

Author_Institution

Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA

Volume

39

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

600

Lastpage

607

Abstract

We identify the main reason impeding coherent generation of phonons in solid state - the inherently high density of phonon states. Based on the results of our analysis we formulate a set of conditions that may make phonon lasing practical and point out the most promising mechanism of phonon lasing: LO→LA+TO in InP. We then develop a complete set of phonon laser equations and evaluate the threshold, output power and efficiency of phonon lasers based on InP MESFET. We show that one can obtain high-power 1.26-THz coherent phonon emission with pump power as small as a few milliwatts and up to 5% slope efficiency. Potential applications are also discussed.

Keywords

III-V semiconductors; Schottky gate field effect transistors; indium compounds; laser theory; phonons; semiconductor lasers; submillimetre wave lasers; 1.26 THz; InP; InP MESFET; acoustic phonon laser; coherent generation; efficiency; high density of phonon states; high-power 1.26-THz coherent phonon emission; output power; phonon laser equations; phonon lasers; pump power; slope efficiency; solid state; threshold; Equations; Geometrical optics; Indium phosphide; Laser theory; Laser transitions; Optical pumping; Phonons; Power lasers; Pump lasers; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.809326

Filename

1188763