DocumentCode :
1164389
Title :
Highly doped 1.55 μm GaxIn1-xAs/InP distributed Bragg reflector stacks
Author :
Guy, P. ; Woodbridge, Karl ; Hopkinson, Mark
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London
Volume :
30
Issue :
18
fYear :
1994
fDate :
9/1/1994 12:00:00 AM
Firstpage :
1526
Lastpage :
1527
Abstract :
The authors have investigated 20 period lattice matched mirror stacks doped to 5×1018 cm-1 and 1019 cm-1 at 1.55 μm in GaxIn1-xAs/InP and have obtained greater than 95% reflectivity over 100 nm and peak reflectivities up to 98%
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; heavily doped semiconductors; indium compounds; integrated optoelectronics; mirrors; semiconductor lasers; 1.55 micron; GaxIn1-xAs/InP; GaInAs-InP; distributed Bragg reflector stacks; peak reflectivities; period lattice matched mirror stacks; reflectivity; semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19941055
Filename :
317056
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1164389
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