InP/InGaAs resonant cavity enhanced photodetector and light emitting diode with external mirrors on Si

Author

Salvador, Arley ; Huang, Fay ; Sverdlov, B. ; Botchkarev, A.E. ; Morkoc, H.

Author_Institution

Mater. Res. Lab., Illinois Univ., Urbana, IL

Volume

30

Issue

18

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

1527

Lastpage

1529

Abstract

Epitaxial lift-off (ELO) techniques were employed in the fabrication of InP/InGaAs vertical surface light emitting diodes and resonant cavity enhanced photodetectors on Si. External mirrors were employed consisting of Si/SiO₂ quarter wave dielectric stacks. The main peak in the emission spectrum of the fabricated device has an FWHM of 8 nm. The spectral response of the photodetector shows wavelength selectivity, and with an InGaAs absorbing layer only 0.1 μm thick a peak quantum efficiency of 0.48 was obtained in the 1.5 μm spectral region

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; mirrors; photodetectors; semiconductor epitaxial layers; 1.5 micron; FWHM; InP/InGaAs; Si; Ti-Au-InP-InGaAs-Si-SiO₂-Si; emission spectrum; epitaxial lift-off techniques; external mirrors; light emitting diode; peak quantum efficiency; quarter wave dielectric stacks; resonant cavity enhanced photodetector; spectral response; wavelength selectivity;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19941057

Filename

317057