Title :
InP/InGaAs resonant cavity enhanced photodetector and light emitting diode with external mirrors on Si
Author :
Salvador, Arley ; Huang, Fay ; Sverdlov, B. ; Botchkarev, A.E. ; Morkoc, H.
Author_Institution :
Mater. Res. Lab., Illinois Univ., Urbana, IL
fDate :
9/1/1994 12:00:00 AM
Abstract :
Epitaxial lift-off (ELO) techniques were employed in the fabrication of InP/InGaAs vertical surface light emitting diodes and resonant cavity enhanced photodetectors on Si. External mirrors were employed consisting of Si/SiO2 quarter wave dielectric stacks. The main peak in the emission spectrum of the fabricated device has an FWHM of 8 nm. The spectral response of the photodetector shows wavelength selectivity, and with an InGaAs absorbing layer only 0.1 μm thick a peak quantum efficiency of 0.48 was obtained in the 1.5 μm spectral region
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; mirrors; photodetectors; semiconductor epitaxial layers; 1.5 micron; FWHM; InP/InGaAs; Si; Ti-Au-InP-InGaAs-Si-SiO2-Si; emission spectrum; epitaxial lift-off techniques; external mirrors; light emitting diode; peak quantum efficiency; quarter wave dielectric stacks; resonant cavity enhanced photodetector; spectral response; wavelength selectivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941057
