A high-gain (Ga,Al)As/GaAs heterostructure bipolar transistor with an equilibrium-depleted spike-doped base

Author

Ezis, A. ; Liou, L.L. ; Ikossi-Anastasiou, K. ; Evans, K.R. ; Stutz, Charles E. ; Jones, R.L.

Author_Institution

Universal Energy Syst. Inc., Dayton, OH, USA

Volume

10

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

168

Lastpage

170

Abstract

The fabrication is reported of a high-gain (Ga,Al)As/GaAs heterostructure bipolar transistor (HBT) with a p-spike-doped base that is depleted at equilibrium. The device structure, based on that proposed for a bipolar inversion-channel field-effect transistor (BICFET), was grown by molecular-beam epitaxy (MBE). Fabricated transistors, containing an AlAs/n-GaAs superlattice emitter layer, exhibited DC current gains of up to 500. Maximum current gains of tested devices occurred at collector current densities in the mid-10/sup 3/ A cm/sup -2/ range. It is postulated that the induced base in these transistors is formed predominantly by the forward-bias action on the base-emitter junction.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor growth; AlAs-GaAs superlattice emitter layer; DC current gains; GaAlAs-GaAs; HBT; base-emitter junction; bipolar inversion-channel field-effect transistor; collector current densities; equilibrium-depleted spike-doped base; forward-bias action; heterostructure bipolar transistor; induced base; molecular-beam epitaxy; Bipolar transistors; Conducting materials; Cutoff frequency; FETs; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Molecular beam epitaxial growth; Superlattices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31706

Filename

31706