DocumentCode :
1164448
Title :
Demonstration of direct bonding between InP and gadolinium gallium garnet (Gd3Ga5O12) substrates
Author :
Mizumoto, Tetsuya ; Maru, K. ; Naito, Yuta
Volume :
30
Issue :
18
fYear :
1994
fDate :
9/1/1994 12:00:00 AM
Firstpage :
1534
Lastpage :
1536
Abstract :
The authors demonstrate the direct bonding of InP/Gd3Ga 5O12 (GGG) and InP/GaInSb on GGG without glue. After chemical treatment, heat treatment was applied in an H2 atmosphere without a weight. This technique makes feasible the integration of semiconductor and magneto-optic devices
Keywords :
III-V semiconductors; gadolinium compounds; garnets; heat treatment; indium compounds; integrated optoelectronics; magneto-optical devices; surface treatment; wafer bonding; GGG substrates; Gd3Ga5O12; H2; H2 atmosphere; InP; InP-GaInSb; InP-GdGG; InP-GdGa5O12; chemical treatment; direct bonding; heat treatment; integration; magneto-optic devices; semiconductor devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19941031
Filename :
317062
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1164448
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