• DocumentCode
    1164469
  • Title

    Influence of Traps and Carriers on Reliability in HfSiON/ \\hbox {SiO}_{2} Stacks

  • Author

    Hirano, Izumi ; Yamaguchi, Takeshi ; Nakasaki, Yasushi ; Sekine, Katsuyuki ; Mitani, Yuichiro

  • Author_Institution
    Corp. R&D Center, Adv. LSI Technol. Lab., Toshiba Corp., Yokohama
  • Volume
    9
  • Issue
    2
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    163
  • Lastpage
    170
  • Abstract
    The influence of traps and current on the degradation in HfSiON has been studied. Different characteristics of activation energy for TDDB between thick and thin HfSiON, where the Poole Frenkel (PF) and tunnel currents mainly flow, respectively, were observed in the same temperature range. It was indicated that the current could promote the breakdown in HfSiON. Furthermore, we investigated the correlation between pre-existing traps and trap generation in HfSiON/SiO2 stacks with fluorine incorporation. It was found that the nature of generated traps correspond to that of pre-existing traps. From these results, it was considered that the interaction between traps and carriers causes the degradation in HfSiON.
  • Keywords
    Poole-Frenkel effect; electron traps; hafnium compounds; silicon compounds; tunnelling; HfSiON-SiO2; Poole Frenkel current; activation energy; carriers; fluorine incorporation; reliability; trap generation; tunnel current; Dielectric breakdown; MOSFETs; hafnium compounds; reliability;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2009.2013939
  • Filename
    4785217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1164469