Implant isolation of InGaAs/GaAs pseudomorphic high-electron mobility transistor structure using boron

Implant isolation studies of an InGaAs/GaAs pseudomorphic high-electron mobility transistor (PHEMT) structure using boron were conducted. Measured sheet resistances reached a maximum value as the boron dose was varied from 10¹¹ to 2×10¹³ cm ^-2 at an energy of 380 keV. The authors present the optimum single boron implant dose/energy in terms of isolation sheet resistance, anneal temperature, and breakdown voltage. A measured sheet resistance in the 10¹⁰ Ω/□ range was achieved using a boron dose/energy of 2×10¹² cm^-2 and 380 keV without or with an anneal temperature up to 470°C