• DocumentCode
    1164506
  • Title

    P+-P-P+ pseudo-bipolar lateral SOI transistor

  • Author

    Colinge, J.P. ; Flandre, Denis ; De Ceuster, D.

  • Author_Institution
    Maxwell-DICE, Univ. Catholique de Louvain
  • Volume
    30
  • Issue
    18
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1543
  • Lastpage
    1545
  • Abstract
    Lateral P+-P-P+ SOI transistors functioning in the hybrid mode (i.e. with body connected to gate) have been tested. Although current transport is solely due to holes, these devices exhibit electrical characteristics which are similar to those of a bipolar transistor. A common-emitter current gain of 1400 is observed in devices having an effective channel (base) length of 1.1 μm
  • Keywords
    bipolar transistors; semiconductor-insulator boundaries; 1.1 micron; P+-P-P+ pseudo-bipolar lateral SOI transistor; Si; common-emitter current gain; current transport; effective channel length; electrical characteristics; hole transport; hybrid mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941040
  • Filename
    317068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1164506