Title :
Sub-0.1 μm MOSFET modelling and circuit simulation
Author :
Ytterdal, Trond ; Shur, Michael S. ; Fjeldly, T.A.
Author_Institution :
Dept. of Phys. Electron., Trondheim Univ.
fDate :
9/1/1994 12:00:00 AM
Abstract :
The authors present the results of device modelling and circuit simulation of recently reported sub-0.1 μm nMOSFET devices and obtain excellent agreement with experimental data both at 300 K and at cryogenic temperatures. The approach accurately describes the subthreshold regime, short channel effects, and the notoriously difficult knee region of the characteristics, making the model suitable for deep submicrometre integrated circuit simulation
Keywords :
circuit analysis computing; insulated gate field effect transistors; semiconductor device models; 0.1 micron; 300 K; circuit simulation; cryogenic temperatures; deep submicrometre integrated circuit simulation; device modelling; electrical characteristics; knee region; short channel effects; sub-0.1 μm nMOSFET devices; subthreshold regime;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941032
