Title :
Threshold voltage mismatch in short-channel MOS transistors
Author :
Steyaert, M. ; Bastos, Joao ; Roovers, R. ; Kinget, Peter ; Sansen, Willy ; Graindourze, B. ; Pergoot, A. ; Janssens, Erik
Author_Institution :
Dept. of Electr. Eng., Katholieke Univ., Leuven
fDate :
9/1/1994 12:00:00 AM
Abstract :
The threshold voltage matching dependency on device area is investigated for a standard 1.2 μm CMOS technology. A deviation from the linear dependency of the threshold voltage matching on the inverse of the square root of the effective channel area is observed for transistors of 1.21 μm channel length
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; 1.2 micron; CMOS technology; channel length; device area; effective channel area; linear dependency; short-channel MOS transistors; threshold voltage matching; threshold voltage mismatch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940999
