Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor

Author

Hsu, Hsing-Hui ; Lin, Horng-Chih ; Chan, Leng ; Huang, Tiao-Yuan

Author_Institution

Dept. of Electron. Eng. & the Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu

Volume

30

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

243

Lastpage

245

Abstract

In this letter, the fluctuation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) with independently controlled double-gate configuration were studied. The defects existing in the NW channels are identified as one of the major sources for the fluctuation. The passivation of these defects by plasma treatment is shown to be effective for reducing the fluctuation. We have also found that the fluctuation is closely related to the operation modes. When only one of the gates is employed as the driving gate to control the switching behavior of the device, an optimum bias for the other gate can be found for minimizing the fluctuation.

Keywords

elemental semiconductors; nanowires; plasma applications; silicon; thin film transistors; Si; double-gated poly-Si nanowire field-effect transistor; plasma treatment; switching behavior; thin-film transistors; threshold-voltage fluctuation; Double gate; fluctuation; nanowire (NW); polycrystalline silicon (poly-Si);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2011568

Filename

4785223