DocumentCode
1164792
Title
A novel trench-defined MISIM CCD structure for X-ray imaging and other applications
Author
Fossum, Eric R.
Author_Institution
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume
10
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
177
Lastpage
179
Abstract
A charge-coupled device (CCD) utilizing a trench-defined metal-insulator-semiconductor-insulator-metal (MISIM) sandwich structure is proposed and analyzed. The CCD features high charge capacity and a deep photogenerated carrier collection depth. The trench CCD structure has potential application in X-ray imaging as well as in high-density visible and infrared imaging.<>
Keywords
CCD image sensors; X-ray detection and measurement; infrared imaging; metal-insulator-semiconductor devices; X-ray imaging; high charge capacity; infrared imaging; photogenerated carrier collection depth; trench-defined MISIM CCD structure; visible imaging; Charge coupled devices; Conductivity; Electrodes; Electromagnetic wave absorption; Metal-insulator structures; Optical imaging; Performance analysis; Silicon; Voltage; X-ray imaging;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31712
Filename
31712
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