Title :
A novel trench-defined MISIM CCD structure for X-ray imaging and other applications
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
A charge-coupled device (CCD) utilizing a trench-defined metal-insulator-semiconductor-insulator-metal (MISIM) sandwich structure is proposed and analyzed. The CCD features high charge capacity and a deep photogenerated carrier collection depth. The trench CCD structure has potential application in X-ray imaging as well as in high-density visible and infrared imaging.<>
Keywords :
CCD image sensors; X-ray detection and measurement; infrared imaging; metal-insulator-semiconductor devices; X-ray imaging; high charge capacity; infrared imaging; photogenerated carrier collection depth; trench-defined MISIM CCD structure; visible imaging; Charge coupled devices; Conductivity; Electrodes; Electromagnetic wave absorption; Metal-insulator structures; Optical imaging; Performance analysis; Silicon; Voltage; X-ray imaging;
Journal_Title :
Electron Device Letters, IEEE
