Title :
High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 μm
Author :
Mounaix, P. ; Tondusson, M. ; Chimot, N. ; Mangeney, J. ; Blary, K. ; Lampin, J.F.
Author_Institution :
Centre de Phys. Moleculaire Opt. et Hertzienne, Univ. Bordeaux, Talence, France
fDate :
7/20/2006 12:00:00 AM
Abstract :
The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth. THz emitter and detector efficiency are strongly dependent on irradiation doses. It was found that equivalent bandwidth and amplitude compared with LTG-GaAs switches excited at 800 nm under the same experimental conditions.
Keywords :
III-V semiconductors; indium compounds; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave generation; 0.8 micron; InP; THz efficiency; amplitude; detection efficiency; emission efficiency; epitaxial layer growth; equivalent bandwidth; heavy-ion-irradiated InP material; ionic irradiation; photocarriers; photoconductive antenna; substrate material; terahertz beam;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061529
